英诺赛科 is a third-generation semiconductor company focused on silicon-based GaN power devices, operating as an IDM that produces both high- and low-voltage GaN chips at scale. The company solved the world-class challenge of epitaxial growth of GaN on 8‑inch silicon wafers and achieved the first large-scale mass production of 8‑inch silicon‑based GaN epitaxy and chips, filling a domestic gap. It claims the leading domestic production capacity and rapid commercialization in consumer fast-charging products, which are already scaling quickly. Future end markets cited include data centers, 5G base stations, and new energy vehicles, which the company expects to drive continued growth. According to TrendForce data from 2021, its GaN power products reached about 20% global market share, rising to the global third position. The company was founded in 2015 and is based in Suzhou.

Total raised

$473M

Funding rounds

1

Latest round

Series D

Latest activity

Feb 2022