Tongguang Co. (同光晶体) focuses on R&D and production of third‑generation semiconductor silicon carbide (SiC) substrates. Its main products include 4‑inch N‑type SiC single crystals, 6‑inch conductive SiC single crystals, and high‑purity semi‑insulating SiC substrates. The company recently completed an F‑round financing totaling ¥15 billion. Proceeds from the round are earmarked to accelerate key project deployment and to further build the company’s technical barriers. Tongguang also plans to construct an enterprise‑level ecosystem around its products. The company intends to use the financing to support cultivation of talent for the third‑generation semiconductor industry. Hebei Tongguang Crystal Co., Ltd. (同光晶体) develops and manufactures third‑generation semiconductor silicon carbide (SiC) single‑crystal substrates, leveraging technology from the Chinese Academy of Sciences Institute of Semiconductors. The company was founded in 2012 and is among China’s early strategic entrants in the third‑generation semiconductor industry. Its core activities center on R&D and mass production of SiC single crystal wafers for upstream materials in the semiconductor supply chain. Management plans to use new funding to accelerate key project deployment, deepen technical barriers, build an enterprise‑level ecosystem, and cultivate talent for the third‑generation semiconductor sector. The company reported that its SiC single‑crystal substrate project construction is running ahead of plan and that factory construction has topped out. Prior investors include Yinhe Yuanhui, CITIC Industrial Fund, and Guotou Chuangye, among others.

Total raised

$210M

Funding rounds

2

Latest round

Series F

Latest activity

Dec 2023