Finwave Semiconductor develops transistors and differentiated GaN-on-Si RF chips designed to optimize the potential of Gallium Nitride (GaN). Its portfolio includes GaN FinFETs, advanced E-mode MISHEMTs, and high-performance RF switches. The company's chips target a wide array of RF applications, including communications infrastructure (base stations, MIMO, small cells, land mobile radios, customer premise equipment, fixed wireless access), Wi‑Fi routers, satellite, radar, drones, anti-drones, test & measurement equipment, and medical equipment. Led by CEO Dr. Pierre-Yves Lesaicherre and based in Waltham, MA, Finwave positions its technology across both infrastructure and mobile markets. The company recently raised funding to accelerate revenue generation, expand its product portfolio, and continue developing its GaN-on-Si technology. No operating metrics were disclosed in the article. Finwave Semiconductor is a Waltham, MA–based company that develops GaN transistors and 3DGaN technology for high‑frequency applications. Its 3DGaN technology and new transistor are designed to optimize Gallium Nitride (GaN) to support industries including 5G, AI, cloud computing, and electric and autonomous vehicles. Finwave says 3DGaN improves linearity, output power and efficiency in 5G mmWave systems while reducing costs for carriers. Founded in 2012 and led by CEO Dr. Bin Lu, the company has offices in Massachusetts and California and partners worldwide. The company raised $12.2M in a Series A and plans to use the proceeds to expand the team, product development activities and lab facilities.

Total raised

$20M

Funding rounds

2

Latest round

Equity

Latest activity

May 2025