KISAB develops a novel growth technology that enables the production of virtually defect‑free silicon carbide (SiC) wafers. The technology emanates from Linköping Technical University. Poor quality of underlying wafer materials currently limits SiC applications, and KISAB's approach promises to revolutionize the market for SiC devices. Yole Développement identified KISAB as the "innovative SiC growth technology" and estimates the SiC device market to be worth $6.3b in 2027. The global SiC device market is being strongly driven by the electric vehicle market and is growing at a compound annual growth rate of 34%. KISAB raised a €7.5m investment round led by Fairpoint Capital, with participation from existing investors including Industrifonden, Ingka GreenTech and LPE.

Total raised

$8M

Funding rounds

1

Latest round

Equity

Latest activity

Sep 2022