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Cambridge GaN Devices

Jeffreys Building, Suite 8, St Johns Innovation Park, Cowley Road, Cambridge, England, CB4 0DS, United Kingdom

Overview

Cambridge GaN Devices develops monolithic ICeGaN® GaN power devices and integrated ICs that deliver efficiency levels exceeding 99% and can yield up to 50% energy savings in high-power applications. The company’s technology targets electric vehicles, data‑centre power supplies, and other high‑power industrial markets and is positioned as an alternative to silicon carbide. CGD is a fabless semiconductor spinout from Cambridge University (founded 2016) with a growing IP portfolio and industry‑leading customers in its pipeline. The business has announced a $32 million Series C to accelerate product delivery and global expansion. Planned use of proceeds includes scaling production and expanding operations in Cambridge, North America, Taiwan and Europe, and supporting deployment of its latest P2 products. CGD emphasises ease-of-use and high-volume manufacturability to help customers adopt GaN in existing and progressive designs. Cambridge GaN Devices (CGD) is a fabless semiconductor spinout from the University of Cambridge (2016) that develops GaN transistors and ICs for high‑efficiency power applications. Its core product family, ICeGaN™, targets a roughly $50bn global power semiconductor market and is positioned for use in consumer and industrial power supplies, lighting, data centres and automotive HEV/EV systems. The company emphasises an easy‑to‑use, IP‑protected technology intended to deliver greater efficiency, sustainability and lower cost. CGD has secured significant commercial traction, completed brand development, moved to new offices and now employs over 40 staff worldwide with further hires planned to support upscaling. It is leading a $10m European‑funded GaNext project, participates in the UK P3EP supply‑chain initiative, and has launched the ICeData project to develop highly reliable GaN devices to cut data‑centre emissions. Prior to this round CGD raised multi‑million seed funding and a Series A. Cambridge GaN Devices (CGD) is a fabless semiconductor startup that designs gallium nitride (GaN) power transistors which the company says are faster, smaller and more efficient than silicon equivalents. Its ICeGaN™ technology targets reductions in energy loss across devices used in laptops, smartphones, data centres and electric vehicles. CGD spun out of Cambridge University in 2016 and has built a growing IP portfolio with more than 50 patent applications. The company has secured projects and funding from Innovate UK (iUK), BEIS and the EU (Penta) to support development. CGD has announced a rebrand, launched the ICeData project aimed at data centres, and plans to bring its first product to market in 2022. It intends to continue heavy R&D investment and significantly expand its team as it pursues market traction and strategic partnerships.

Total raised
$61M
Funding rounds
3
Latest round
Series C
Latest activity
Feb 2025

Industries

  • Electronics
  • Manufacturing
  • Semiconductor
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Recent funding

  1. Series C

    Feb 2025

    $32M

  2. Series B

    Nov 2022

    $19M

  3. Series A

    Feb 2022

    $10M

Team